WHAT IS THE CARRIER CONCENTRATION IN HIGH-T-C CUPRATES - A TIGHT-BINDING BAND MODEL

被引:1
|
作者
KUBO, Y
机构
[1] Fundamental Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba
来源
PHYSICA C | 1994年 / 235卷
关键词
D O I
10.1016/0921-4534(94)91880-5
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tight binding calculations including both Cu-O and O-O interactions in the CuO2 plane reveal an unusual electron state in which the ''Hall (cyclotron) mass'' parallel to the Fermi surface is holelike (<0) but the ''transport mass'' perpendicular to it is electronlike (>0). This duality of electrons on the Fermi surface causes much confusion in the concept of ''carrier concentration''.
引用
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页码:1311 / 1312
页数:2
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