WHAT IS THE CARRIER CONCENTRATION IN HIGH-T-C CUPRATES - A TIGHT-BINDING BAND MODEL

被引：1
|
作者：
KUBO, Y
机构：
[1] Fundamental Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba
来源：
PHYSICA C | 1994年 / 235卷
关键词：
D O I：
10.1016/0921-4534(94)91880-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tight binding calculations including both Cu-O and O-O interactions in the CuO2 plane reveal an unusual electron state in which the ''Hall (cyclotron) mass'' parallel to the Fermi surface is holelike (<0) but the ''transport mass'' perpendicular to it is electronlike (>0). This duality of electrons on the Fermi surface causes much confusion in the concept of ''carrier concentration''.
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收藏
页码：1311 / 1312
页数：2
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