FABRICATION AND PERFORMANCE OF IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES OVERGROWN ON GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
NICHOLS, KB [1 ]
BROWN, ER [1 ]
MANFRA, MJ [1 ]
MCMAHON, OB [1 ]
ZAMPARDI, PJ [1 ]
PIERSON, RL [1 ]
WANG, KC [1 ]
机构：
[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Resonant tunneling diodes (RTDs) have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system on GaAs substrates. The RTDs have peak-to-valley current ratios (PVCRs) of approximately 9 and peak voltages of approximately 1 V at room temperature. This PVCR is 50% greater than any reported RTD using the lattice-matched GaAs/AlGaAs or GaAs/AlAs material systems. When compared to an identical RTD structure grown lattice-matched on an InP substrate, these RTDs exhibit only a 20% reduction in PVCR with similar peak current and voltage. The RTD layers were overgrown on GaAs/AlGaAs heterojunction bipolar transistor (HBT) layers. The HBTs fabricated showed only a small degradation in their current-voltage characteristics.
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页码：737 / 742
页数：6
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