ELECTROABSORPTION OPTICAL BISTABILITY IN A WAVE-GUIDE P-I-N DOUBLE HETEROSTRUCTURE WITH A TUNNEL-RESONANT LOAD

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DOLMANOV, IN

TOLSTIKHIN, VI

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 02期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：205 / 209

页数：5

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[1] MECHANISM OF OPTICAL NONLINEARITY IN WAVE-GUIDE P-I-N STRUCTURES UNDER CONDITIONS OF ELECTROABSORPTION OF LIGHT
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[5] HIGHLY EFFICIENT 40-GHZ WAVE-GUIDE INGAAS P-I-N PHOTODIODE EMPLOYING MULTIMODE WAVE-GUIDE STRUCTURE
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[6] EFFECTIVE MODULATION OF RADIATION AND N-SHAPED PHOTOCURRENT-VOLTAGE CHARACTERISTIC REPRESENTING ELECTROABSORPTION OF LIGHT IN A DOUBLE P-I-N HETEROSTRUCTURE
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[8] ELECTRON-HOLE PAIR GENERATION RATE OF A MONOLITHIC INTEGRATED WAVE-GUIDE PHOTODETECTOR - APPLICATION TO THE MODELING OF MONOLITHIC INTEGRATED WAVE-GUIDE P-I-N PHOTODIODES
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[10] ELECTRIC ABSORPTION BISTABILITY OF WAVE-GUIDE P-1-N DHS WITH TUNNEL-RESONANCE MECHANISM OF THE TRANSFER OF PHOTOGENERATED CARRIERS
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