TEMPERATURE-DEPENDENCE OF TRANSIENT ELECTRON-RADIATION UPSET IN TTL NAND GATES

被引：1

作者：

LEEDY, TF ^{[1
]}

MCLANE, GF ^{[1
]}

GUENZER, GC ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4597 / 4605

页数：9

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