TEMPERATURE-DEPENDENCE OF TRANSIENT ELECTRON-RADIATION UPSET IN TTL NAND GATES

被引：1
|
作者：
LEEDY, TF [1 ]
MCLANE, GF [1 ]
GUENZER, GC [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期
关键词：
D O I：
10.1109/TNS.1981.4335771
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4597 / 4605
页数：9
相关论文
共 50 条
  • [21] TEMPERATURE-DEPENDENCE OF ELECTRON DRIFT VELOCITY IN SILICON
    HAAS, GA
    PANKEY, T
    HARRIS, FH
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2433 - 2434
  • [22] STIMULATED RADIATION OF ELECTRON-HOLE PLASMA IN CDSE CRYSTAL AND ITS TEMPERATURE-DEPENDENCE
    VOLOVIK, NV
    STRASHNIKOVA, MI
    FIZIKA TVERDOGO TELA, 1978, 20 (01): : 171 - 176
  • [23] TEMPERATURE-DEPENDENCE OF LIQUID VISCOSITY IN TRANSIENT STATE THEORY
    ZHITOMIRSKII, AN
    ZHURNAL FIZICHESKOI KHIMII, 1980, 54 (07): : 1674 - 1676
  • [24] TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE RESPONSE
    POOLE, CF
    JOURNAL OF CHROMATOGRAPHY, 1976, 118 (02): : 280 - 281
  • [25] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS
    JERVIS, TR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : K199 - K202
  • [26] TEMPERATURE-DEPENDENCE OF ELECTRON EFFECTIVE MASS IN INSB
    KOTELES, ES
    DATARS, WR
    PHYSICAL REVIEW B, 1974, 9 (02): : 568 - 571
  • [27] TEMPERATURE-DEPENDENCE OF CONTRAST OF ELECTRON CHANNELING DIAGRAMS
    BRUNNER, M
    KOHL, HJ
    NIEDRIG, H
    MIKROSKOPIE, 1978, 34 (5-6) : 189 - 189
  • [28] TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF SUBMILLIMETER RADIATION IN COMPENSATED GERMANIUM
    VAVILOV, VS
    KAZANSKII, AG
    KOSHELEV, OG
    PLESKACHEVA, TB
    SAPTSIN, VM
    TSIKUNOV, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1122 - 1124
  • [29] TEMPERATURE-DEPENDENCE OF MUON COMPONENTS OF COSMIC-RADIATION
    BOLLI, W
    DEBRUNNE.H
    HELVETICA PHYSICA ACTA, 1972, 45 (06): : 941 - 942
  • [30] TEMPERATURE-DEPENDENCE OF ESR SIGNAL OF RADIATION DEFECTS IN SILICON
    DEMIDOV, ES
    EZHEVSKII, AA
    KHOKHLOV, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (04): : 459 - 460
12345