A SYMMETRICAL MAGNET MAGNETRON-SPUTTERING METHOD FOR FILM DEPOSITION

被引：7
|
作者：
FAN, QH
HONG, Y
CHEN, HY
CHEN, XH
机构：
[1] Center of Materials Analysis, University of Electronic Science and Technology of China, Chengdu
来源：
THIN SOLID FILMS | 1993年 / 229卷 / 01期
关键词：
D O I：
10.1016/0040-6090(93)90408-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new type of cathode-sputtering apparatus with one inner annular magnet and two outer annular magnets facing each other has been developed. It cannot only deposit films at high rate but also greatly improve the target utilization. The maximum deposition rate of Cu films was about 11 000 angstrom min-1. The target utilization was improved to about 64%. For a target 76 mm in diameter the uniformity of Cu film thickness was better than +/- 5% over a region about 54 mm in diameter.
引用
收藏
页码：51 / 53
页数：3
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