PHOTO-LUMINESCENCE MEASUREMENTS FOR CD-DIFFUSED INP P-N-JUNCTION

被引:4
|
作者
OHTSUKA, K
YAMAZOE, Y
NISHINO, T
HAMAKAWA, Y
机构
关键词
D O I
10.1143/JJAP.20.1113
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1113 / 1116
页数:4
相关论文
共 50 条
  • [21] TRANSMISSION ELECTRON MICROSCOPE STUDY OF DEFECTS IN Cd-DIFFUSED n-InP SUBSTRATES.
    Ueda, Osamu
    Ishikawa, Hiroshi
    Umebu, Itsuo
    1600, (23):
  • [22] PHOTO-LUMINESCENCE STUDY OF MELT GROWN INP
    TEMKIN, H
    BONNER, WA
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 397 - 401
  • [23] PHOTO-LUMINESCENCE OF SSD AND LEC GROWN INP
    BARANKOVA, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 71 (02): : K153 - K156
  • [24] PHOTO-LUMINESCENCE OF MG-IMPLANTED INP
    POMRENKE, G
    HENGEHOLD, RL
    PARK, YS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 462 - 462
  • [25] DETERMINATION OF IMPURITY CONCENTRATION IN N-TYPE INP BY A PHOTO-LUMINESCENCE TECHNIQUE
    PICKERING, C
    TAPSTER, PR
    DEAN, PJ
    ASHEN, DJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 469 - 476
  • [26] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP
    NAGAI, H
    NOGUCHI, Y
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1544 - 1545
  • [27] PHOTO-LUMINESCENCE OF EPITAXIAL INP-YB FILMS
    ZAKHARENKOV, LF
    KASATKIN, VA
    KESAMANLY, FP
    SAMORUKOV, BE
    SOKOLOVA, MA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 946 - 946
  • [28] SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES
    DIADIUK, V
    ARMIENTO, CA
    GROVES, SH
    HURWITZ, CE
    ELECTRON DEVICE LETTERS, 1980, 1 (09): : 177 - 178
  • [29] BIAS-DEPENDENT PHOTO-LUMINESCENCE INTENSITIES IN N-INP SCHOTTKY DIODES
    ANDO, K
    YAMAMOTO, A
    YAMAGUCHI, M
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6432 - 6434
  • [30] PHOTO-LUMINESCENCE INVESTIGATIONS OF DIFFUSED GAAS LIGHT-EMITTING DIODES
    REICHL, H
    HUBER, D
    MULLER, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (02): : 489 - 495