SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES

被引：21

|

作者：

DIADIUK, V

ARMIENTO, CA

GROVES, SH

HURWITZ, CE

机构：

来源：

ELECTRON DEVICE LETTERS | 1980年 / 1卷 / 09期

关键词：

D O I：

10.1109/EDL.1980.25278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：177 / 178

页数：2

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