SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES

被引：21
|
作者：
DIADIUK, V
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
机构：
来源：
ELECTRON DEVICE LETTERS | 1980年 / 1卷 / 09期
关键词：
D O I：
10.1109/EDL.1980.25278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：177 / 178
页数：2
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