AN IMPROVED ANALYTIC MODEL FOR THE METAL INSULATOR-SEMICONDUCTOR TUNNEL JUNCTION

被引：15
|
作者：
CHU, KM
PULFREY, DL
机构：
[1] Univ of British Columbia, Vancouver,, BC, Can
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期
关键词：
D O I：
10.1109/16.7369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
21
引用
收藏
页码：1656 / 1663
页数：8
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