ELECTRICAL-PROPERTIES AND THERMAL-STABILITY OF MBE-GROWN AL/ALXGA1-XAS/AL0.25GA0.75AS SCHOTTKY BARRIERS

被引：5
|
作者：
BOSACCHI, A [1 ]
FRANCHI, S [1 ]
GOMBIA, E [1 ]
MOSCA, R [1 ]
FANTINI, F [1 ]
MENOZZI, R [1 ]
NACCARELLA, S [1 ]
机构：
[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 10期
关键词：
SCHOTTKY-BARRIER DIODES; MOLECULAR BEAM EPITAXIAL GROWTH;
D O I：
10.1049/el:19940533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied.
引用
收藏
页码：820 / 822
页数：3
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