THERMAL-STABILITY OF AL/ALGAAS AND AL/GAAS/ALGAAS(MBE) SCHOTTKY BARRIERS

被引：9
|
作者：
BOSACCHI, A [1 ]
FRANCHI, S [1 ]
GOMBIA, E [1 ]
MOSCA, R [1 ]
FANTINI, F [1 ]
FRANCHI, S [1 ]
MENOZZI, R [1 ]
机构：
[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 08期
关键词：
SCHOTTKY BARRIER DEVICES; SEMICONDUCTORS;
D O I：
10.1049/el:19930436
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.
引用
收藏
页码：651 / 653
页数：3
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