ELECTRICAL-PROPERTIES AND THERMAL-STABILITY OF MBE-GROWN AL/ALXGA1-XAS/AL0.25GA0.75AS SCHOTTKY BARRIERS

被引：5
|
作者：
BOSACCHI, A [1 ]
FRANCHI, S [1 ]
GOMBIA, E [1 ]
MOSCA, R [1 ]
FANTINI, F [1 ]
MENOZZI, R [1 ]
NACCARELLA, S [1 ]
机构：
[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 10期
关键词：
SCHOTTKY-BARRIER DIODES; MOLECULAR BEAM EPITAXIAL GROWTH;
D O I：
10.1049/el:19940533
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied.
引用
收藏
页码：820 / 822
页数：3
相关论文
共 33 条
  • [21] PHASE EQUILIBRIA IN SYSTEM AL-GA-AS-SN AND ELECTRICAL PROPERTIES OF SN-DOPED LIQUID-PHASE EPITAXIAL ALXGA1-XAS
    PANISH, MB
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2667 - 2675
  • [22] Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
    Gardner, Geoffrey C.
    Watson, John D.
    Mondal, Sumit
    Deng, Nianpei
    Csathy, Gabor A.
    Manfra, Michael J.
    APPLIED PHYSICS LETTERS, 2013, 102 (25)
  • [23] ELECTRICAL AND OPTICAL-PROPERTIES OF SELECTIVELY DOPED AL0.25GA0.75AS/INYGA1-YAS (0.25-LESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.45) PSEUDOMORPHIC HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    KUDO, M
    MISHIMA, T
    WASHIMA, M
    APPLIED PHYSICS LETTERS, 1994, 64 (05) : 628 - 630
  • [24] SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES
    CHIN, A
    HSIEH, KY
    LIN, HY
    APPLIED PHYSICS LETTERS, 1994, 65 (15) : 1921 - 1923
  • [25] DC AND RF PERFORMANCE OF LP-MOCVD GROWN AL0.25GA0.75AS/INXGA1-XAS (X=0.15-0.28) P-HEMT WITH SI-DELTA DOPED GAAS LAYER
    JEON, YJ
    JEONG, YH
    KIM, B
    KIM, YG
    HONG, WP
    LEE, MS
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) : 563 - 565
  • [26] EFFECT OF GROUP-V-III FLUX RATIO ON OPTICAL AND ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    NOMURA, Y
    MANNOH, M
    MIHARA, M
    NARITSUKA, S
    YAMANAKA, K
    YUASA, T
    ISHII, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C95 - C95
  • [27] A detailed investigation of electronic and intersubband optical properties of AlxGa1-xAs/Al0.3Ga0.7As/AlyGa1-yAs/Al0.3Ga0.7As multi-shell quantum dots
    Kavruk, Ahmet Emre
    Sahin, Mehmet
    Atav, Ulfet
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (29)
  • [28] SPONTANEOUSLY FORMED LONG-RANGE AL-RICH AND GA-RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND OPTICAL-PROPERTIES ENHANCEMENT IN (111)A ALGAAS
    CHIN, A
    LIN, BC
    GU, GL
    HSIEH, KY
    APPLIED PHYSICS LETTERS, 1995, 67 (24) : 3617 - 3619
  • [29] Thermal stability and electrical properties of BiFe1-xMxO3 (M=Al3+, Ga3+) ceramics
    Cao, Tian-Fu
    Dai, Jian-Qing
    Zhu, Jian-Hui
    Li, Xiao-Ya
    Wang, Xiao-Wei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (04) : 3647 - 3654
  • [30] Thermal stability and electrical properties of BiFe1−xMxO3 (M = Al3+, Ga3+) ceramics
    Tian-Fu Cao
    Jian-Qing Dai
    Jian-Hui Zhu
    Xiao-Ya Li
    Xiao-Wei Wang
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 3647 - 3654
1234