DESIGNERS - PREPARE FOR THE GAAS-FET AGE .1. GAAS-FET CIRCUITS BEGIN WITH BIASING CHOICES

被引：0

|

作者：

ARDEN, J

机构：

来源：

MICROWAVES | 1982年 / 21卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：89 / 91

页数：3

相关论文

共 50 条

[21] GAAS-FET UPCONVERTER FOR TV TUNER
ABLASSMEIER, U
KELLNER, W
KNIEPKAMP, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1156 - 1159
[22] IMPEDANCE CHARACTERIZATION OF GAAS-FET SWITCHES
TAKASU, H
YAMASHITA, E
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (07) : 1422 - 1429
[23] DESIGNERS; PREPARE FOR THE GAAS FET AGE - 5. GAAS FET CIRCUITS HANDLE HIGH POWER.
BUNNELL, DEAN
1982, V 21 (N 11): : 87 - 89
[24] ACCURATE NONLINEAR CHARACTERIZATION AND MODELING OF THE GAAS-FET
ALLAMANDO, E
BONNAIRE, Y
ALTA FREQUENZA, 1988, 57 (07): : 331 - 334
[25] L-BAND GAAS-FET AMPLIFIER
NEVIN, L
WONG, R
MICROWAVE JOURNAL, 1979, 22 (04) : 82 - &
[26] DESIGN AND SPECIFICATION CONSIDERATIONS OF GAAS-FET LNAS
POSNER, RD
MICROWAVE JOURNAL, 1979, 22 (05) : 69 - &
[27] A NOVEL CAMEL DIODE GATE GAAS-FET
KOPP, W
DRUMMOND, TJ
WANG, T
MORKOC, H
SU, SL
ELECTRON DEVICE LETTERS, 1982, 3 (04): : 86 - 88
[28] A 60-GHZ GAAS-FET AMPLIFIER
WATKINS, ET
MICROWAVES & RF, 1983, 22 (05) : 71 - 71
[29] NONLINEARITY IN GAAS-FET POWER AMPLIFYING DEVICES
CHENG, TC
SHURMER, HV
ELECTRONICS LETTERS, 1984, 20 (19) : 788 - 790
[30] TEMPERATURE COMPENSATION FOR MICROWAVE GAAS-FET AMPLIFIERS
RAFFAELLI, L
GOLDWASSER, R
MICROWAVE JOURNAL, 1986, 29 (05) : 315 - &

← 1 2 3 4 5 →