DESIGNERS - PREPARE FOR THE GAAS-FET AGE .1. GAAS-FET CIRCUITS BEGIN WITH BIASING CHOICES

被引：0

作者：

ARDEN, J

机构：

来源：

MICROWAVES | 1982年 / 21卷 / 06期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：89 / 91

页数：3

共 50 条

[1] DESIGNERS - PREPARE FOR THE GAAS-FET AGE .4. FEEDBACK TECHNIQUES RULE GAAS-FET AMPLIFIER DESIGNS
BUNNELL, D
MICROWAVES, 1982, 21 (09): : 101 - 102
[2] DESIGNERS - PREPARE FOR THE GAAS-FET AGE .2. GAAS-FETS SURPASS BIPOLARS AT MW FREQUENCIES
ARDEN, J
MICROWAVES, 1982, 21 (07): : 71 - &
[3] GAAS-FET AS A LIGHT TRANSDUCER
EDWARDS, WD
ELECTRONICS LETTERS, 1985, 21 (09) : 399 - 401
[4] GAAS-FET RF SWITCHES
GOPINATH, A
RANKIN, JB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1272 - 1278
[5] MINIATURIZED GAAS-FET AMPLIFIER
HIDAKA, N
TAKEUCHI, Y
SHIMA, T
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1980, 16 (02): : 77 - 94
[6] HOW TO SELECT A GAAS-FET
WADE, P
MICROWAVES, 1980, 19 (02): : 64 - 66
[7] BE A SMARTER GAAS-FET SPECIFIER
MOSKOWITZ, S
MICROWAVES, 1980, 19 (02): : 62 - 63
[8] GaAs-FET OSCILLATORS.
Ishihara, Osamu
Mori, Tetsuro
Mitsubishi Electric Advance, 1981, 15 : 12 - 13
[9] DLTS IN GAAS-FET STRUCTURES
RODINE, ET
FARMER, JW
LANGER, DW
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 245 - 245
[10] CRYOGENIC GAAS-FET AMPLIFIER
WITHINGTON, S
ELECTRONICS LETTERS, 1984, 20 (12) : 506 - 508