共 50 条
- [1] IONIZATION ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 214 - 215
- [3] IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN PARA-TYPE SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 325 - 325
- [4] IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN N-TYPE SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (01): : 18 - 19
- [6] CALCULATION OF IONIZATION-ENERGY OF INTERSTITIAL IMPURITIES IN SILICON REVUE ROUMAINE DE PHYSIQUE, 1986, 31 (03): : 249 - 256
- [8] ANALYSIS OF PHOTOTHERMAL IONIZATION SPECTRA OF SHALLOW IMPURITIES IN SILICON PHYSICAL REVIEW B, 1986, 33 (12): : 8180 - 8187
- [9] ENERGY OF MIGRATION OF INTERSTITIAL-D IMPURITIES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 628 - 630
- [10] THE IONIZATION-ENHANCED EFFECTS IN SILICON CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 13 (3-4): : 219 - 223