ENERGY OF MIGRATION OF INTERSTITIAL-D IMPURITIES IN SILICON

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作者：

FISTUL, VI

SHMUGUROV, VA

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 06期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：628 / 630

页数：3

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