ESTIMATES OF THE NONRADIATIVE RECOMBINATION VELOCITY AT HETEROJUNCTIONS IN ALGAAS STRUCTURES

被引：0
|
作者：
ABDULLAEV, A
GARBUZOV, DZ
ERMAKOVA, AN
TRUKAN, MK
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1015 / 1017
页数：3
相关论文
共 50 条
  • [21] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION IN ALGAAS-GAAS DOUBLE HETERO STRUCTURE LASER MATERIAL
    JOHNSTON, WD
    LOGAN, RA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1054 - 1055
  • [22] Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique
    Fukuyama, A
    Ohno, R
    Akashi, Y
    Ikari, T
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01): : 550 - 552
  • [23] NONRADIATIVE RECOMBINATION OF BIEXCITON
    PETRASHKU, KG
    KHADZHI, PI
    FIZIKA TVERDOGO TELA, 1975, 17 (12): : 3666 - 3667
  • [24] Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures
    Maksimov, MV
    Sizov, DS
    Makarov, AG
    Kayander, IN
    Asryan, LV
    Zhukov, AE
    Ustinov, VM
    Cherkashin, NA
    Bert, NA
    Ledentsov, NN
    Bimberg, D
    SEMICONDUCTORS, 2004, 38 (10) : 1207 - 1211
  • [25] Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures
    M. V. Maksimov
    D. S. Sizov
    A. G. Makarov
    I. N. Kayander
    L. V. Asryan
    A. E. Zhukov
    V. M. Ustinov
    N. A. Cherkashin
    N. A. Bert
    N. N. Ledentsov
    D. Bimberg
    Semiconductors, 2004, 38 : 1207 - 1211
  • [26] SURFACE RECOMBINATION VELOCITY AT GAAS-ALXGA1-XAS HETEROJUNCTIONS
    ETTENBERG, M
    KRESSEL, H
    JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (06) : 1257 - 1257
  • [27] Nonradiative recombination processes in (CdTe,CdCrTe)/CdMgTe quantum well structures
    Godlewski, M
    Ivanov, VY
    Zakrzewski, AJ
    Wojtowicz, T
    Karczewski, G
    Kossut, J
    Bergman, JP
    Monemar, B
    ACTA PHYSICA POLONICA A, 1997, 92 (04) : 781 - 784
  • [28] Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes
    V. V. Kabanov
    Ye. V. Lebiadok
    G. I. Ryabtsev
    A. S. Smal
    M. A. Shchemelev
    D. A. Vinokurov
    S. O. Slipchenko
    Z. N. Sokolova
    I. S. Tarasov
    Semiconductors, 2012, 46 : 1316 - 1320
  • [29] Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes
    Kabanov, V. V.
    Lebiadok, Ye. V.
    Ryabtsev, G. I.
    Smal, A. S.
    Shchemelev, M. A.
    Vinokurov, D. A.
    Slipchenko, S. O.
    Sokolova, Z. N.
    Tarasov, I. S.
    SEMICONDUCTORS, 2012, 46 (10) : 1316 - 1320
  • [30] IMPACT IONIZATION IN THE ALGAAS LAYER OF GAAS/ALGAAS HETEROJUNCTIONS
    VANHALL, PJ
    ZWAAL, EAE
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (03) : 323 - 328
12345