ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION IN ALGAAS-GAAS DOUBLE HETERO STRUCTURE LASER MATERIAL

被引：0

作者：

JOHNSTON, WD

LOGAN, RA

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期

关键词：

D O I：

10.1109/T-ED.1975.18272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1054 / 1055

页数：2

共 50 条

[1] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE
JOHNSTON, WD
LOGAN, RA
APPLIED PHYSICS LETTERS, 1976, 28 (03) : 140 - 142
[2] RECOMBINATION ENHANCED ANNEALING EFFECT IN ALGAAS-GAAS REMOTE JUNCTION HETEROSTRUCTURE LASERS
KOBAYASHI, T
FURUKAWA, Y
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 674 - 684
[3] The coherence of the AlGaAs-GaAs phonon laser
Makler, SS
Camps, I
PHYSICA B-CONDENSED MATTER, 2002, 316 : 300 - 303
[4] RADIATIVE AND NONRADIATIVE RECOMBINATION IN GAAS-ALGAAS SUPERLATTICES
LAMBERT, B
SERMAGE, B
DEVEAUD, B
CLEROT, F
CHOMETTE, A
REGRENY, A
SURFACE SCIENCE, 1990, 228 (1-3) : 210 - 212
[5] BENT-GUIDE STRUCTURE ALGAAS-GAAS SEMICONDUCTOR-LASER
MATSUMOTO, N
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 560 - 564
[6] HOW MUCH AL IN ALGAAS-GAAS LASER
RODE, DL
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3887 - 3891
[7] MONOLYTIC ELECTROLUMINESCENT MATRICES FROM ALGAAS-GAAS HETERO-TRANSITIONS
ALFEROV, ZI
ANDREEV, VM
SYRBU, AV
TROFIM, VG
YAKOVLEV, VP
ZHURNAL TEKHNICHESKOI FIZIKI, 1977, 47 (12): : 2547 - 2554
[8] A NEW DOUBLE-HETEROJUNCTION ALGAAS-GAAS STRUCTURE FOR SPACE SOLAR-CELLS
ALBUSTANI, A
FETEHA, MY
RENEWABLE ENERGY, 1994, 5 (1-4) : 281 - 284
[9] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT
KRESSEL, H
ETTENBERG, M
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3533 - 3537
[10] Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface
Dzhioev, RI
Kavokin, KV
PHYSICS OF THE SOLID STATE, 2003, 45 (09) : 1644 - 1647

← 1 2 3 4 5 →