MONOLYTIC ELECTROLUMINESCENT MATRICES FROM ALGAAS-GAAS HETERO-TRANSITIONS

被引:0
|
作者
ALFEROV, ZI [1 ]
ANDREEV, VM [1 ]
SYRBU, AV [1 ]
TROFIM, VG [1 ]
YAKOVLEV, VP [1 ]
机构
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源
ZHURNAL TEKHNICHESKOI FIZIKI | 1977年 / 47卷 / 12期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2547 / 2554
页数:8
相关论文
共 19 条
  • [1] AN INVESTIGATION OF SOLAR ELEMENTS WITH HETERO-TRANSITIONS GAAS-ALGAAS AT HIGH-LEVELS OF OPTICAL-EXCITATION
    ALFEROV, ZI
    ARIPOV, KK
    EGOROV, BV
    KOROLEVA, NS
    LARIONOV, VR
    NULLER, TA
    RUMYANTSEV, VD
    FEDOROVA, OM
    ZHURNAL TEKHNICHESKOI FIZIKI, 1981, 51 (12): : 2550 - 2553
  • [2] POWER LIGHT DIODES WITH 2 HETERO-TRANSITIONS IN ALAS-GAAS SYSTEM
    ALFEROV, ZI
    ANDREEV, VM
    GARBUZOV, DZ
    DAVIDYUK, NY
    LARIONOV, VR
    MARAKHONOV, VM
    SMIRNOVA, EK
    SHELOVANOVA, GN
    ZHURNAL TEKHNICHESKOI FIZIKI, 1975, 45 (02): : 374 - 381
  • [3] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION IN ALGAAS-GAAS DOUBLE HETERO STRUCTURE LASER MATERIAL
    JOHNSTON, WD
    LOGAN, RA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1054 - 1055
  • [4] GROWTH OF ALGAAS-GAAS HETEROSTRUCTURES FROM STEP-COOLED SOLUTIONS
    RODE, DL
    SOBERS, RG
    JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 61 - 64
  • [5] RECTIFICATION OF CURRENT IN QUANTUM POINT CONTACTS MADE FROM ALGAAS-GAAS HETEROSTRUCTURES
    TABORYSKI, R
    GEIM, AK
    LINDELOF, PE
    PHYSICA B, 1994, 194 : 1131 - 1132
  • [6] Investigations of the energetic and thermal characteristics of a module based on a Fresnel lens and a hetero-photo-converter in the AlGaAs-GaAs system
    Mirzabaev M.
    Rasulov K.
    Komilov A.
    Abakumov A.A.
    Applied Solar Energy (English translation of Geliotekhnika), 2007, 43 (03): : 133 - 135
  • [7] LARGE ENHANCEMENT OF POLARIZATION OBSERVED BY EXTRACTED ELECTRONS FROM THE ALGAAS-GAAS SUPERLATTICE
    OMORI, T
    KURIHARA, Y
    NAKANISHI, T
    AOYAGI, H
    BABA, T
    FURUYA, T
    ITOGA, K
    MIZUTA, M
    NAKAMURA, S
    TAKEUCHI, Y
    TSUBATA, M
    YOSHIOKA, M
    PHYSICAL REVIEW LETTERS, 1991, 67 (23) : 3294 - 3297
  • [8] EMISSION FROM A SEMI-INSULATING LAYER IN ALGAAS-GAAS DOUBLE HETEROSTRUCTURES
    BEISTER, G
    KRISPIN, P
    MAEGE, J
    BACHERT, HJ
    STOEFF, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (01): : K93 - K96
  • [9] TEMPERATURE-DEPENDENCE OF SPONTANEOUS EMISSION FROM ALGAAS-GAAS LASER-DIODES
    ZABROWSKI, DW
    RICE, RR
    SPECHT, AP
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2293 - 2296
  • [10] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN ON VARIOUSLY ORIENTED GAAS SUBSTRATES BY MBE
    FUKUNAGA, T
    TAKAMORI, T
    NAKASHIMA, H
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 85 - 90