ISOELECTRONIC DOPING EFFECT IN INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：2
|
作者：
CHEN, JC
XIE, K
CHEN, JF
CHEN, WK
WIE, CR
LIU, PL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 05期
关键词：
D O I：
10.1116/1.576323
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：3119 / 3120
页数：2
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