ANOMALOUS MAGNETORESISTANCE OF (ZN1-XMNX)(3)AS-2 IN THE REGION OF HOPPING CONDUCTIVITY

被引：2
|
作者：
LAIHO, R [1 ]
LISUNOV, KG [1 ]
STAMOV, VN [1 ]
ZAHVALINSKII, VS [1 ]
机构：
[1] MOLDAVIAN ACAD SCI,INST APPL PHYS,KISHINEV 277028,MOLDOVA
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 02期
关键词：
D O I：
10.1016/0038-1098(94)00612-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Measurements of magnetoresistance have been carried out between 4-20 K for (Zn1-xMnx)(3)As-2 with 0.01 less than or equal to x less than or equal to 0.13. A positive contribution to magnetoresistance prevailing at H < H-0 is attributed to shift of the mobility threshold. A negative part is observed above H-0 approximate to 1-3T, depending on x. It is connected with suppression of the underbarrier spin-flip scattering of holes in the magnetic field.
引用
收藏
页码：151 / 154
页数：4
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