ANOMALOUS MAGNETORESISTANCE OF (ZN1-XMNX)(3)AS-2 IN THE REGION OF HOPPING CONDUCTIVITY

被引：2
|
作者：
LAIHO, R [1 ]
LISUNOV, KG [1 ]
STAMOV, VN [1 ]
ZAHVALINSKII, VS [1 ]
机构：
[1] MOLDAVIAN ACAD SCI,INST APPL PHYS,KISHINEV 277028,MOLDOVA
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 02期
关键词：
D O I：
10.1016/0038-1098(94)00612-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Measurements of magnetoresistance have been carried out between 4-20 K for (Zn1-xMnx)(3)As-2 with 0.01 less than or equal to x less than or equal to 0.13. A positive contribution to magnetoresistance prevailing at H < H-0 is attributed to shift of the mobility threshold. A negative part is observed above H-0 approximate to 1-3T, depending on x. It is connected with suppression of the underbarrier spin-flip scattering of holes in the magnetic field.
引用
收藏
页码：151 / 154
页数：4
相关论文
共 50 条
  • [31] Correlation of magnetic properties with microstructural properties for columnar-structured (Zn1-xMnx)O/Al2O3 (0001) thin films
    Lee, S
    Kang, TW
    Kim, DY
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 284 (1-2) : 6 - 14
  • [32] Role of electron ''lakes'' in the negative magnetoresistance effect in the region of Mott hopping conductivity
    Ionov, AN
    Rentzsch, R
    Shlimak, I
    [J]. JETP LETTERS, 1996, 63 (03) : 199 - 203
  • [33] Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region
    S. V. Demishev
    A. D. Bozhko
    V. V. Glushkov
    E. A. Kataeva
    A. G. Lyapin
    E. D. Obraztsova
    T. V. Ishchenko
    N. A. Samarin
    N. E. Sluchanko
    [J]. Physics of the Solid State, 2008, 50 : 1386 - 1391
  • [34] Negative magnetoresistance in a two-dimensional electronic system in the region of hopping conductivity
    Voiskovskii, AE
    Pudalov, VM
    [J]. JETP LETTERS, 1995, 62 (12) : 947 - 951
  • [35] Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region
    Demishev, S. V.
    Bozhko, A. D.
    Glushkov, V. V.
    Kataeva, E. A.
    Lyapin, A. G.
    Obraztsova, E. D.
    Ishchenko, T. V.
    Samarin, N. A.
    Sluchanko, N. E.
    [J]. PHYSICS OF THE SOLID STATE, 2008, 50 (07) : 1386 - 1391
  • [36] (La1-xSrx)(Zn1-xMnx)SbO: A novel 1111-type diluted magnetic semiconductor
    Zhang Hao-Jie
    Zhang Ru-Fei
    Fu Li-Cheng
    Gu Yi-Lun
    Zhi Guo-Xiang
    Dong Jin-Ou
    Zhao Xue-Qin
    Ning Fan-Long
    [J]. ACTA PHYSICA SINICA, 2021, 70 (10)
  • [37] Phase transition and electronic structure of Zn1-xMnx Se (x = 0 and 0.25) under high pressure
    Y. Zhu
    W. X. Ying
    Z. Q. Yang
    J. X. Cao
    R. Q. Wu
    [J]. The European Physical Journal B, 2009, 72 : 367 - 373
  • [38] SYNTHESIS AND OPTICAL PROPERTIES OF CU2(ZN1-XMNX)SNS4 THIN FILMS WITH TUNABLE BAND GAP
    Guan, H.
    Shen, H.
    Li, J.
    [J]. CHALCOGENIDE LETTERS, 2017, 14 (06): : 217 - 221
  • [39] The synthesis and characterization of 1 1 1 1 type diluted ferromagnetic semiconductor (La1-xCax)(Zn1-xMnx)AsO
    Ding, Cui
    Guo, Shengli
    Zhao, Yao
    Man, Huiyuan
    Fu, Licheng
    Gu, Yilun
    Wang, Zhouyang
    Liu, L.
    Frandsen, B. A.
    Cheung, S.
    Uemura, Y. J.
    Goko, T.
    Luetkens, H.
    Morenzoni, E.
    Zhao, Yang
    Ning, F. L.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (02)
  • [40] Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material
    Ivanov, O. N.
    Lyubushkin, R. A.
    Yaprintsev, M. N.
    Sudzhanskaya, I. V.
    [J]. JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (04)
12345