MAGNETORESISTANCE OF (ZN1-XMNX)(3)AS-2 IN REGION OF HOPPING CONDUCTIVITY

被引：2
|
作者：
LAIHO, R [1 ]
LISUNOV, K [1 ]
STAMOV, V [1 ]
ZAHVALINSKY, V [1 ]
机构：
[1] KISHINEV APPL PHYS INST,KISHINEV,MOLDOVA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷
关键词：
D O I：
10.1016/0304-8853(94)00711-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetoresistance (MR) of (Zn1-xMnx)(3)As-2 (0 less than or equal to x less than or equal to 0.13) is measured at 4 < T < 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field.
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页码：2021 / 2022
页数：2
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