RADIATIVE RECOMBINATION IN GAAS-ALXGA1-XAS QUANTUM DOTS

被引：36

作者：

WANG, PD ^{[1
]}

TORRES, CMS ^{[1
]}

BENISTY, H ^{[1
]}

WEISBUCH, C ^{[1
]}

BEAUMONT, SP ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental and theoretical results on the low-temperature luminescence intensity of dry-etched GaAs-AlxGa1-xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1-mu-m to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of approximately 10(5) cm/s for GaAs, we can obtain a good fit to the data.

引用

页码：946 / 948

页数：3

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