PHOTODIODES BASED ON GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引:0
|
作者
BERGMANN, YV [1 ]
KOROLKOV, VI [1 ]
LARIONOV, VR [1 ]
NIKITIN, VG [1 ]
机构
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 10期
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D O I
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1152 / 1155
页数:4
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