REACTIVE ION ETCHING OF GALLIUM-ARSENIDE

被引：0
|
作者：
AVTIUSHKOV, AP
LABUNOV, VA
STEKOLNIKOV, AF
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(89)90834-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：496 / 499
页数：4
相关论文
共 50 条
  • [31] GALLIUM DIFFUSION IN GALLIUM-ARSENIDE
    PALFREY, HD
    WILLOUGHBY, AFW
    BROWN, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C93 - C93
  • [32] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
    PALIK, ED
    HOLM, RT
    GIBSON, JW
    THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
  • [33] PHOTOREFLECTANCE OF GALLIUM-ARSENIDE
    MARONCHUK, YE
    SHERSTYAKOV, AP
    TOKAREV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 386 - 389
  • [34] GALLIUM-ARSENIDE IN JAPAN
    MORTENSEN, P
    ELECTRONICS AND POWER, 1985, 31 (02): : 115 - 118
  • [35] GALLIUM-ARSENIDE ISSUE
    BOWSER, M
    BYTE, 1992, 17 (06): : 20 - 20
  • [36] GALLIUM-ARSENIDE DENDRITES
    MOSS, RH
    NICHOLSON, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (08) : C198 - C198
  • [37] GALLIUM-ARSENIDE ON SILICON
    FAN, JCC
    VLSI SYSTEMS DESIGN, 1987, 8 (13): : 80 - 81
  • [38] GALLIUM-ARSENIDE ELECTRONICS
    GIBBONS, G
    PHYSICS IN TECHNOLOGY, 1987, 18 (01): : 5 - 10
  • [39] DEFECTING TO GALLIUM-ARSENIDE
    不详
    SCIENCE NEWS, 1984, 125 (20) : 312 - 312
  • [40] RECRYSTALLIZATION OF AMORPHOUS GALLIUM-ARSENIDE BY ION-BEAMS
    SADANA, DK
    CHOKSI, H
    WASHBURN, J
    BYRNE, PF
    CHEUNG, NW
    APPLIED PHYSICS LETTERS, 1984, 44 (03) : 301 - 303
12345