INTERFACE STRUCTURE OF II-VI EPITAXIAL LAYERS

被引：0
|
作者：
FEUILLET, G [1 ]
BOURRET, A [1 ]
SAMINADAYAR, K [1 ]
HEWAT, E [1 ]
DICIOCCIO, L [1 ]
TATARENKO, S [1 ]
CIBERT, J [1 ]
机构：
[1] CEN, CEA, CNRS, F-38041 GRENOBLE, FRANCE
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The interface structure of Molecular Beam Epitaxy ZnTe and CdTe layers grown onto (001) GaAs was assessed by High Resolution T.E.M.. Conventional <110> lattice images combined with observations under <100> illumination, together with image simulation allowed us to investigate the stacking sequence at the interfaces and their atomic roughness.
引用
收藏
页码：395 / 396
页数：2
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