INTERFACE STRUCTURE OF II-VI EPITAXIAL LAYERS

被引：0

作者：

FEUILLET, G ^{[1
]}

BOURRET, A ^{[1
]}

SAMINADAYAR, K ^{[1
]}

HEWAT, E ^{[1
]}

DICIOCCIO, L ^{[1
]}

TATARENKO, S ^{[1
]}

CIBERT, J ^{[1
]}

机构：

[1] CEN, CEA, CNRS, F-38041 GRENOBLE, FRANCE

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interface structure of Molecular Beam Epitaxy ZnTe and CdTe layers grown onto (001) GaAs was assessed by High Resolution T.E.M.. Conventional <110> lattice images combined with observations under <100> illumination, together with image simulation allowed us to investigate the stacking sequence at the interfaces and their atomic roughness.

引用

页码：395 / 396

页数：2

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