共 50 条
- [31] ION-IMPLANTATION TECHNIQUE FOR SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACTTHIN SOLID FILMS, 1983, 104 (3-4) : 383 - 389TSAUR, BYANDERSON, CH
- [33] ELIMINATION OF END-OF-RANGE SHALLOW JUNCTION IMPLANTATION DAMAGE DURING CMOS TITANIUM SILICIDATIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 466 - 471WEN, DSSMITH, POSBURN, CMROZGONYI, GA
- [34] Ostwald ripening of end-of-range defects in siliconJOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3008 - 3017Bonafos, CMathiot, DClaverie, A
- [35] ION-IMPLANTATION DAMAGE AND ANNEALING OF SILICON AS CHARACTERIZED BY DIFFERENTIAL REFLECTOMETRYJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) : 3583 - 3588HUMMEL, REXI, WHAGMANN, DR
- [36] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGEIEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49ASHOK, SMOGROCAMPERO, A
- [37] EFFECTS OF ION-IMPLANTATION DAMAGE ON TWO-DIMENSIONAL BORON-DIFFUSION IN SILICONJOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1380 - 1391MARCHIANDO, JFALBERS, J
- [38] SOLID-PHASE EPITAXY OF POLYCRYSTALLINE SILICON FILMS - EFFECTS OF ION-IMPLANTATION DAMAGEAPPLIED PHYSICS LETTERS, 1984, 45 (08) : 910 - 912QUACH, NTREIF, R
- [39] THE EFFECT OF ION-IMPLANTATION DAMAGE ON DOPANT DIFFUSION IN SILICON DURING SHALLOW-JUNCTION FORMATIONJOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) : 143 - 150KIM, YMASSOUD, HZFAIR, RB
- [40] ION-IMPLANTATION OF POROUS SILICONAPPLIED PHYSICS LETTERS, 1994, 64 (10) : 1259 - 1261PENG, CFAUCHET, PMREHM, JMMCLENDON, GLSEIFERTH, FKURINEC, SK