EFFECTS OF SILICIDE FORMATION ON THE REMOVAL OF END-OF-RANGE ION-IMPLANTATION DAMAGE IN SILICON

被引：16
|
作者：
LUR, W
CHENG, JY
CHU, CH
WANG, MH
LEE, TC
WANN, YJ
CHAO, WY
CHEN, LJ
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(89)90791-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：297 / 301
页数：5
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