HIGH-RESOLUTION TIME-OF-FLIGHT ELECTRON SPECTROMETER

被引：6

作者：

UEHARA, Y ^{[1
]}

USHIROKU, T ^{[1
]}

USHIODA, S ^{[1
]}

MURATA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 12期

关键词：

TOF; HIGH RESOLUTION ELECTRON SPECTROMETER; NEA ELECTRON EMITTER;

D O I：

10.1143/JJAP.29.2858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a high resolution time-of-flight (TOF) electron spectrometer. To attain the high resolution, a new high speed electron gate was developed for precise flight time measurement. The time resolution of this gate improves for slow electrons and it is a few hundred picoseconds for an electron beam of a few eV. To evaluate the performance of the TOF spectrometer, we have measured the energy distribution of electrons emitted form NEA GaAs irradiated by a 820 nm GaAlAs laser with a 60 ps pulse width. The spectrometer including the gate works as intended and the highest resolution achieved is 3 meV for the electron flight energy of 3 eV.

引用

页码：2858 / 2863

页数：6

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