INTENSE INTERJUNCTION STRAIN IN PHOSPHORUS-DIFFUSED SILICON

被引：4
|
作者：
JUNGBLUTH, ED
CHIAO, HC
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 04期
关键词：
D O I：
10.1149/1.2411241
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：429 / +
页数：1
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