INTENSE INTERJUNCTION STRAIN IN PHOSPHORUS-DIFFUSED SILICON

被引：4
|
作者：
JUNGBLUTH, ED
CHIAO, HC
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 04期
关键词：
D O I：
10.1149/1.2411241
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：429 / +
页数：1
相关论文
共 50 条
  • [21] Dislocation-free oxidation of porous silicon formed using highly phosphorus-diffused silicon and its application
    Arita, Y
    Kuranari, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3A): : 1040 - 1046
  • [22] STUDY OF ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON
    CHOU, SL
    GIBBONS, JF
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1197 - 1203
  • [23] Surface passivation of phosphorus-diffused emitters by inline thermal oxidation
    Mack, S.
    Wufka, C.
    Wolf, A.
    Belledin, U.
    Scheffler, D.
    Biro, D.
    PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 : 343 - 348
  • [24] DISTRIBUTION OF DIFFUSED PHOSPHORUS IN SILICON
    MIKHAILOVA, DN
    KASABOV, ID
    SOVIET PHYSICS-SOLID STATE, 1962, 4 (06): : 1228 - 1229
  • [25] Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
    Kerr, MJ
    Schmidt, J
    Cuevas, A
    Bultman, JH
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3821 - 3826
  • [26] CARRIER PROFILE CHANGE FOR PHOSPHORUS-DIFFUSED LAYERS ON LOW-TEMPERATURE HEAT TREATMENT
    SCHWETTMANN, FN
    KENDALL, DL
    APPLIED PHYSICS LETTERS, 1971, 19 (07) : 218 - +
  • [27] Dielectric Stack Passivation on Boron-and Phosphorus-Diffused Surfaces and 20% Efficient PERT Cell on n-CZ Silicon Substrate
    Nemeth, Bill
    Yuan, Hao-Chih
    Page, Matthew
    LaSalvia, Vincenzo
    Chaukulkar, Rohan
    Gedvilas, Lynn
    Li, Jian V.
    Stradins, Paul
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 629 - 633
  • [28] STRAIN COMPENSATION IN SILICON BY DIFFUSED IMPURITIES
    YEH, TH
    JOSHI, ML
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 73 - &
  • [29] Intense light emission in diffused porous silicon junctions
    Jain, V.K.
    Gupta, Amita
    Kumar, Adarsh
    Singhal, G.K.
    Kumar, Vikram
    Pure and applied optics, 1994, 3 (03): : 225 - 229
  • [30] On the generation of bulk microdefects in phosphorus-diffused monocrystalline silicon solar wafers after a high-thermal treatment studied by X-ray topography
    Gonzalez-Manas, M.
    Vallejo, B.
    Caballero, M. A.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 116 (03): : 1315 - 1325
12345