INTENSE INTERJUNCTION STRAIN IN PHOSPHORUS-DIFFUSED SILICON

被引：4

|

作者：

JUNGBLUTH, ED

CHIAO, HC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 04期

关键词：

D O I：

10.1149/1.2411241

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：429 / +

页数：1

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