共 50 条
- [1] EFFICIENCY AND KINETICS OF ELECTRO-LUMINESCENCE EMITTED BY DOUBLE INGAASP HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 286 - 290
- [2] EFFICIENCY AND KINETICS OF ELECTROLUMINESCENCE EMITTED BY DOUBLE InGaAsP HETEROSTRUCTURES. Soviet physics. Semiconductors, 1981, 15 (03): : 286 - 290
- [3] EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY ALGAAS DOUBLE HETEROSTRUCTURES WITH SMOOTH AND DIFFUSELY SCATTERING EMITTING SURFACES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 868 - 870
- [4] EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED BY AlGaAs DOUBLE HETEROSTRUCTURES WITH SMOOTH AND DIFFUSELY SCATTERING EMITTING SURFACES. Soviet physics. Semiconductors, 1981, 15 (08): : 868 - 870
- [5] PHOTO-LUMINESCENCE INTENSITY IN INGAASP INP DOUBLE-HETEROSTRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L297 - L299
- [6] DOUBLE INP INGAASP (LAMBDA=1.3-MU) HETEROSTRUCTURES WITH AN EXTERNAL LUMINESCENCE QUANTUM EFFICIENCY OF - 40-PERCENT(300-DEGREES-K) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1326 - 1328
- [7] INFLUENCE OF THE ACTIVE REGION THICKNESS OF THE EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM THREE-LAYER AlAs - GaAs HETEROSTRUCTURES. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1540 - 1542
- [8] INFLUENCE OF ACTIVE REGION THICKNESS ON EXTERNAL QUANTUM EFFICIENCY OF LUMINESCENCE EMITTED FROM 3-LAYER ALAS-GAAS HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1540 - 1542
- [10] PHOTOLUMINESCENCE INVESTIGATION OF THE TRAPPING OF CARRIERS BY A QUANTUM WELL IN INGAASP INP DOUBLE HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1201 - 1204