EFFICIENCY AND KINETICS OF ELECTRO-LUMINESCENCE EMITTED BY DOUBLE INGAASP HETEROSTRUCTURES

被引:0
|
作者
GARBUZOV, DZ
GORELENOK, AT
TRUKAN, MK
USIKOV, AS
CHALYI, VP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 03期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:286 / 290
页数:5
相关论文
共 50 条
  • [1] QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM DOUBLE INGAASP HETEROSTRUCTURES
    BERT, NA
    GARBUZOV, DZ
    GORELENOK, AT
    KONNIKOV, SG
    MDIVANI, VN
    TIBILOV, VK
    CHALYI, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 400 - 402
  • [2] EFFICIENCY AND KINETICS OF ELECTROLUMINESCENCE EMITTED BY DOUBLE InGaAsP HETEROSTRUCTURES.
    Garbuzov, D.Z.
    Gorelenok, A.T.
    Trukan, M.K.
    Usikov, A.S.
    Chalyi, V.P.
    Soviet physics. Semiconductors, 1981, 15 (03): : 286 - 290
  • [3] CHARACTERISTICS OF ELECTRO-LUMINESCENCE EMITTED BY COPPER SULFIDE ZINC-SULFIDE HETEROSTRUCTURES
    GORBIK, PP
    KOMASHCHENKO, VN
    KONONETS, YF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 322 - 323
  • [4] SOME CHARACTERISTICS OF THE ELECTRO-LUMINESCENCE EMITTED BY EPITAXIAL AL-GA-SB HETEROSTRUCTURES
    ZIMOGOROVA, NS
    KRYACHKO, IV
    MATKOVA, II
    PRAMATAROVA, LD
    SHOSTKA, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 324 - 326
  • [5] INFLUENCE OF REABSORPTION ON THE ELECTRO-LUMINESCENCE KINETICS
    ROSSIN, VV
    SIDOROV, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (01): : 106 - 107
  • [6] Ultraviolet luminescence and electro-luminescence of polydihexylsilane
    Ebihara, K.
    Matsushita, S.
    Koshihara, S.
    Minami, F.
    Miyazawa, T.
    Obata, K.
    Kira, M.
    Journal of Luminescence, 1997, 72-74 : 43 - 45
  • [7] Ultraviolet luminescence and electro-luminescence of polydihexylsilane
    Ebihara, K
    Matsushita, S
    Koshihara, S
    Minami, F
    Miyazawa, T
    Obata, K
    Kira, M
    JOURNAL OF LUMINESCENCE, 1997, 72-4 : 43 - 45
  • [8] EXTERNAL QUANTUM ELECTRO-LUMINESCENCE YIELD IN THE DOUBLE ALGAAS-HETEROSTRUCTURES WITH ADDITIONAL RE-RADIATING LAYERS
    AGAFONOV, VG
    GARBUZOV, DZ
    DAVIDYUK, NY
    ERMAKOVA, AN
    TUPITSKAYA, NA
    ZHURNAL TEKHNICHESKOI FIZIKI, 1982, 52 (01): : 173 - 176
  • [9] KINETICS OF RADIATIVE RECOMBINATION IN ZNSE-ZNTE ELECTRO-LUMINESCENCE DIODES
    FIRSZT, F
    LOZYKOWSKI, HJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C90 - C91