INFLUENCE OF THE ACTIVE REGION THICKNESS OF THE EXTERNAL QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM THREE-LAYER AlAs - GaAs HETEROSTRUCTURES.

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作者：

Andreev, V.M.

Garbuzov, D.Z.

Trukan, M.K.

Shelovanova, G.N.

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来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 8卷 / 12期

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摘要：

SEMICONDUCTING ALUMINUM COMPOUNDS

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页码：1540 / 1542

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