REAL-TIME OBSERVATION OF ALAS/GAAS SUPERLATTICE GROWTH BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY

被引：6

作者：

SUGIYAMA, N ^{[1
]}

HASHIMOTO, A ^{[1
]}

TAMURA, M ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA, IBARAKI 30026, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9A期

关键词：

INSITU MONITORING; ION-SCATTERING SPECTROSCOPY; CAICISS; GAAS; MBE; REAL-TIME OBSERVATION;

D O I：

10.1143/JJAP.30.L1576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monitoring of the layer-by-layer growth of an AlAs/GaAs superlattice is performed using coaxial impact-collision ion-scattering spectroscopy. By exploiting high-frequency time-of-flight analysis, real-time observations of the intensity variation from Ga signals, which indicates the surface coverage of GaAs, are achieved. The intensity increases when GaAs is grown on AlAs, and the rise time of the intensity variation agrees well with the time for one-monolayer growth of GaAs.

引用

页码：L1576 / L1578

页数：3

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