NEGATIVE-RESISTANCE SWITCHING IN SUPERLATTICES - RESONANT TUNNELING OR HOT-ELECTRON TRANSFER

被引：0
|
作者：
SIBILLE, A [1 ]
PALMIER, JF [1 ]
MINOT, C [1 ]
BRETAGNON, T [1 ]
机构：
[1] UNIV MONTPELLIER 2,GES,F-34060 MONTPELLIER,FRANCE
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 4-5期
关键词：
D O I：
10.1016/0749-6036(88)90218-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
25
引用
收藏
页码：459 / 463
页数：5
相关论文
共 50 条
  • [41] ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE
    TSUCHIYA, M
    SAKAKI, H
    YOSHINO, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L466 - L468
  • [42] THE SWITCHING MECHANISM IN THE HETEROSTRUCTURE HOT-ELECTRON DIODE
    HIGMAN, TK
    HIGMAN, JM
    EMANUEL, MA
    HESS, K
    COLEMAN, JJ
    KOLODZEY, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2381 - 2381
  • [43] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - BALLISTIC GAAS DEVICES WITH CURRENT GAIN
    HEIBLUM, M
    THOMAS, DC
    KNOEDLER, CM
    NATHAN, MI
    SURFACE SCIENCE, 1986, 174 (1-3) : 478 - 480
  • [44] HOT-ELECTRON INTERVALLEY TRANSFER IN SILICON
    NOUGIER, JP
    ROLLAND, M
    GASQUET, D
    PHYSICAL REVIEW B, 1975, 11 (04): : 1497 - 1502
  • [45] PHOTOLUMINESCENCE SPECTROSCOPY OF HOT CARRIERS IN SUPERLATTICES INJECTED BY RESONANT TUNNELING
    GRAHN, HT
    RUHLE, WW
    VONKLITZING, K
    PLOOG, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B409 - B412
  • [46] INGAAS ALAS INGAASP RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
    CHEN, WL
    MUNNS, GO
    EAST, JR
    HADDAD, GI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) : 155 - 161
  • [47] High magnetic field study of ballistic transport in a resonant-tunneling hot-electron transistor (RHET)
    Strutz, T
    Takamasu, T
    Miura, N
    Imamura, K
    Eaves, L
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (04) : 1019 - 1027
  • [48] 121 GHZ RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS HAVING NEW COLLECTOR BARRIER STRUCTURE
    MORI, T
    ADACHIHARA, T
    TAKATSU, M
    OHNISHI, H
    IMAMURA, K
    MUTO, S
    YOKOYAMA, N
    ELECTRONICS LETTERS, 1991, 27 (17) : 1523 - 1524
  • [49] EXPERIMENTAL-ANALYSIS OF RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS OPERATED AT ROOM-TEMPERATURE
    MORI, T
    IMAMURA, K
    OHNISHI, H
    MINAMI, Y
    MUTO, S
    YOKOYAMA, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2453 - 2453
  • [50] A 1/2 FREQUENCY-DIVIDER USING RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHETS)
    TAKATSU, M
    IMAMURA, K
    OHNISHI, H
    MORI, T
    ADACHIHARA, T
    MUTO, S
    YOKOYAMA, N
    IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (08) : 918 - 921
12345