MEASUREMENT OF VLSI POWER-SUPPLY CURRENT BY ELECTRON-BEAM PROBING

被引:9
|
作者
JENKINS, KA
FRANCH, RL
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY
关键词
D O I
10.1109/4.135341
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The measurement of power supply noise and current by electron-beam probing is described. Noise measurements can be made on the chip under test, and current measurements can be made on the circuit board.
引用
收藏
页码:948 / 950
页数:3
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