CHEMICAL ETCHING OF INDIUM NITRIDE

被引：37
|
作者：
GUO, QX [1 ]
KATO, O [1 ]
YOSHIDA, A [1 ]
机构：
[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 07期
关键词：
D O I：
10.1149/1.2221165
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Indium nitride epitaxial layers were grown by microwave-excited metalorganic vapor phase epitaxy. Acid solutions are inappropriate for etching the surface of indium nitride, but alkaline etchants, such as aqueous KOH and NaOH solutions, give controllable etching rates. Smooth surfaces free from etch pits are thereby obtained.
引用
收藏
页码：2008 / 2009
页数：2
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