On the band gap of indium nitride

被引：48
|
作者：
Nag, BR [1 ]
机构：
[1] Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 237卷 / 02期
关键词：
D O I：
10.1002/pssb.200301823
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct-gap II-VI and III-V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.
引用
收藏
页码：R1 / R2
页数：2
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