On the band gap of indium nitride

被引：48
|
作者：
Nag, BR [1 ]
机构：
[1] Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 237卷 / 02期
关键词：
D O I：
10.1002/pssb.200301823
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct-gap II-VI and III-V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.
引用
收藏
页码：R1 / R2
页数：2
相关论文
共 50 条
  • [21] The factors Influencing the band gap bowing of III nitride alloys
    Zhao, Chuanzhen
    Yu, Liyuan
    Tang, Chunxiao
    Li, Ming
    Zhang, Jianxin
    SOFT MAGNETIC MATERIALS, 2011, 298 : 13 - +
  • [22] ENERGETIC STATES IN THE BORON-NITRIDE BAND-GAP
    LOPATIN, VV
    KONUSOV, FV
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1992, 53 (06) : 847 - 854
  • [23] Size effects in band gap bowing in nitride semiconducting alloys
    Gorczyca, I.
    Suski, T.
    Christensen, N. E.
    Svane, A.
    PHYSICAL REVIEW B, 2011, 83 (15)
  • [24] Visible photonic band gap engineering in silicon nitride waveguides
    Netti, MC
    Charlton, MDB
    Parker, GJ
    Baumberg, JJ
    APPLIED PHYSICS LETTERS, 2000, 76 (08) : 991 - 993
  • [25] Narrow band gap group III-nitride alloys
    Walukiewicz, W
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 300 - 307
  • [26] Microscale inverse acoustic band gap structure in aluminum nitride
    Kuo, Nai-Kuei
    Zuo, Chengjie
    Piazza, Gianluca
    APPLIED PHYSICS LETTERS, 2009, 95 (09)
  • [27] Band gap engineering of gallium nitride surface quantum wells
    Zhang, X
    Cai, A
    Fothergill, D
    Muth, JF
    2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 13 - 14
  • [28] Crystalline silicon carbon nitride: A wide band gap semiconductor
    Chen, LC
    Chen, CK
    Wei, SL
    Bhusari, DM
    Chen, KH
    Chen, YF
    Jong, YC
    Huang, YS
    APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2463 - 2465
  • [29] Why the Band Gap of Graphene Is Tunable on Hexagonal Boron Nitride
    Kan, Erjun
    Ren, Hao
    Wu, Fang
    Li, Zhenyu
    Lu, Ruifeng
    Xiao, Chuanyun
    Deng, Kaiming
    Yang, Jinlong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (04): : 3142 - 3146
  • [30] Indium Nitride and Indium Gallium Nitride layers grown on nanorods
    Webster, R. F.
    Cherns, D.
    Goff, L. E.
    Novikov, S. V.
    Foxon, C. T.
    Fischer, A. M.
    Ponce, F. A.
    18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII), 2013, 471
12345