DEPENDENCE OF ANOMALOUS PHOSPHORUS DIFFUSION IN SILICON ON DEPTH POSITION OF DEFECTS CREATED BY ION-IMPLANTATION

被引：28
|
作者：
SOLMI, S [1 ]
CEMBALI, F [1 ]
FABBRI, R [1 ]
SERVIDORI, M [1 ]
CANTERI, R [1 ]
机构：
[1] IRST,DIV SCI MAT,I-38050 POVO,ITALY
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 03期
关键词：
D O I：
10.1007/BF00619395
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：255 / 260
页数：6
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