Charge capture in AlGaAs/GaAs heterostructures with disordered antidot lattice

被引：0
|
作者：
Basmaji, P
Gusev, GM
Lubyshev, DI
Silva, MDA
Rossi, JC
Nastaushev, YV
Baklanov, MR
机构：
[1] LAB CHAMPS MAGNET INTENSES,CNRS,F-38042 GRENOBLE,FRANCE
[2] UNIV FED SAO CARLOS,SAO CARLOS,BRAZIL
[3] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK,RUSSIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期
基金：
巴西圣保罗研究基金会;
关键词：
heterostructures;
D O I：
10.1016/0921-5107(95)01351-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed hot electron trapping by DY centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
引用
收藏
页码：322 / 324
页数：3
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