DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN

被引：25
|
作者：
CLEGG, JB [1 ]
SCOTT, GB [1 ]
HALLAIS, J [1 ]
MIRCEAROUSSEL, A [1 ]
机构：
[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期
关键词：
D O I：
10.1063/1.328837
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1110 / 1112
页数：3
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