EFFECT OF ILLUMINATION ON MOBILITIES IN SEMI-INSULATING GAAS

被引：0

作者：

THEODOROU, DE ^{[1
]}

EUTHYMIOU, PC ^{[1
]}

机构：

[1] UNIV ATHENS,DEPT PHYS,ATHENS,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：427 / 429

页数：3

共 50 条

[1] DETERMINATION OF CARRIER MOBILITIES IN SEMI-INSULATING GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 955 - 957
[2] ON THE DETERMINATION OF CARRIER MOBILITIES AND DENSITIES IN SEMI-INSULATING GAAS
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 80 (01): : 317 - 323
[3] EFFECT OF ILLUMINATION TIME ON THERMALLY STIMULATED CURRENTS IN SEMI-INSULATING GAAS
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[J]. APPLIED PHYSICS LETTERS, 1967, 10 (01) : 31 - &
[4] ON THE RELATION BETWEEN ELECTRON AND HOLE MOBILITIES IN SEMI-INSULATING GAAS
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[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1982, 112 (02): : K143 - K147
[5] Photoacoustic study of the effect of 0.9 eV light illumination in semi-insulating GaAs
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[6] SEMI-INSULATING GAAS
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[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 436 - 444
[7] TEMPERATURE-DEPENDENCE OF MOBILITIES AND CARRIER CONCENTRATIONS IN SEMI-INSULATING GAAS
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PAPASTAMATIOU, MJ
KALKANIS, GT
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[J]. SOLID STATE COMMUNICATIONS, 1980, 34 (04) : 245 - 247
[8] PROPERTIES OF SEMI-INSULATING GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2069 - &
[9] SEMI-INSULATING EPITAXIAL GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) : 6274 - 6278
[10] EFFECT OF A MAGNETIC FIELD ON PHOTOCONDUCTIVITY OF SEMI-INSULATING GAAS
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[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (11) : R2 - &

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