INFLUENCE OF AN AS-FREE ATMOSPHERE IN MIGRATION-ENHANCED EPITAXY ON STEP-FLOW GROWTH

被引：14
|
作者：
YAMAGUCHI, H
HORIKOSHI, Y
机构：
[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词：
MBE; MEE; STEP-FLOW GROWTH; MISORIENTED SUBSTRATES;
D O I：
10.1143/JJAP.30.802
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reflection high-energy electron diffraction is observed during the growth of GaAs, AlGaAs, and InAs by migration-enhanced epitaxy on misoriented (100) substrates. The influence of an As-free atmosphere during Ga deposition in migration-enhanced epitaxy on step-flow growth is examined. Measurements of the change in specular peak intensity show that an As-free atmosphere accelerates step-flow growth, and that the ease with which step-flow growth occurs follows the order of InAs, GaAs, and AlGaAs. On the other hand, measurements of the specular peak width of the diffraction intensity profiles show that uniform step structures can be obtained for GaAs and AlGaAs layers under the same conditions if a small amount of As pressure is added during the metallic atom deposition in the process of migration-enhanced epitaxy.
引用
收藏
页码：802 / 808
页数：7
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